Vishay Intertechnology, Inc. (NYSE: VSH) released a 60-V n-channel power MOSFET in the tiny SOT-923 package that will provide dramatic space savings over devices in larger packages such as the SC-70 and SC-89. The smallest 60-V power MOSFET ever released, the SiM400 in the SOT-923 measures 1 mm by 0.6 mm with a maximum height profile of 0.43 mm. Its footprint dimensions are 77 % smaller than the SC-89, and its height profile is 26 % thinner.
Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 12-V p-channel TrenchFET® Gen III power MOSFET with the industry’s lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-75, which features a 1.6-mm by 1.6-mm footprint area. The new SiB455EDK is the latest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET in half.