Tag Archives: TrenchFET

Vishay Debuts SiB455EDK 12-V p-channel TrenchFET Gen III Power MOSFET

Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 12-V p-channel TrenchFET® Gen III power MOSFET with the industry’s lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-75, which features a 1.6-mm by 1.6-mm footprint area. The new SiB455EDK is the latest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET in half.

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Vishay Intertechnology Rolls Out SiA433EDJ 20-V P-Channel Power MOSFET

Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK® SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET nearly in half.

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