Texas Instruments announced the bq51013 receiver integrated circuit (IC) for wireless charging. The TI chip combines voltage conditioning and full wireless power control in a small 1.9-mm x 3-mm WCSP package. The bq51013 wireless power receiver supports up to 5 W of output power, provides up to 93% efficient AC/DC power conversion and is the only IC required between the receiver coil and system. The Qi compliant IC is available now in a 1.9mm x 3mm WCSP package. It is priced at $3.50 (quantities of 1,000).
Dialog Semiconductor plc (FWB: DLG), a leading provider of highly integrated innovative power management semiconductor solutions, has announced that it has purchased power management technology through an asset transaction from Diodes Zetex GmbH.
Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 12-V p-channel TrenchFET® Gen III power MOSFET with the industry’s lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-75, which features a 1.6-mm by 1.6-mm footprint area. The new SiB455EDK is the latest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET in half.
Mentor Graphics Corporation, (NASDAQ:MENT) announced that Kontron AG, headquartered in Eching, Germany, has expanded its Expedition[TM] Enterprise PCB installation from Mentor Graphics, with worldwide usage of the Mentor Graphics HyperLynx® solution for signal and power integrity. Kontron selected the HyperLynx signal and power integrity product for its accurate analysis and simulation capabilities, ease-of-use, and quick setup time, ideal for today’s high-performance/density/pin-count ICs that require multiple PCB power and ground structures. Combined with the Expedition Enterprise platform and the Mentor Graphics DMS (Data Management System), the HyperLynx product formulates a comprehensive solution for high-performance electronic product design that reduces design cycle times, prototypes, manufacturing re-spins and overall product performance and development costs.
Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK® SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET nearly in half.