Microchip Technology introduced the MCP19035 power-conversion controller family and the MCP87xxx family of power MOSFET devices. The MCP19035 and MCP87xxx families are available now for sampling and volume production. The MCP19035 family is available in a 3×3 mm 10-pin DFN package. Prices start at $1.12 each in 5,000-unit quantities. The MCP87022 and the MCP87050 are availalbe in a 5×6 mm 8-pin PDFN packages and the MCP87055 is available in a 3.3×3.3 mm 8-pin PDFN package. Prices start at $0.96, $0.45, and $0.39, respectively (5,000-unit).
Summit Microelectronics introduced their SMB220 and SMB221 integrated 10A and 20A buck regulators. The new chips feature built-in MOSFET’s, digital programmability and non-volatile configuration. The Summit step-down DC-DC buck regulators are available now in a thermally-enhanced, RoHS-compliant, lead-free 5mm X 6mm, 28-pad QFN. The SMB220 is priced $1.80 each while the SMB221 is priced at $2.50 respectively (quantities of 10,000 units). The SMB220/SMB221 are ideal for enterprise servers and storage systems, enterprise and carrier switches/routers/base stations, and consumer digital media (IP digital television and set-top box).
Revealing research breakthroughs, engineers from SEMATECH’s Front End Processes (FEP) program will present technical papers at the 56th annual IEEE International Electron Devices Meeting (IEDM) from December 6-8, 2010, at the Hilton in San Francisco, CA. SEMATECH experts will report on resistive RAM (RRAM) memory technologies, advanced Fin and nanowire FETs for scaled CMOS devices, high mobility III-V channel materials on 200mm silicon wafers in an industry standard MOSFET flow, and future ultra-low power tunneling FET devices — highlighting significant breakthroughs that address the growing need for higher performance and low power devices.
Vishay Intertechnology, Inc. (NYSE: VSH) released a 60-V n-channel power MOSFET in the tiny SOT-923 package that will provide dramatic space savings over devices in larger packages such as the SC-70 and SC-89. The smallest 60-V power MOSFET ever released, the SiM400 in the SOT-923 measures 1 mm by 0.6 mm with a maximum height profile of 0.43 mm. Its footprint dimensions are 77 % smaller than the SC-89, and its height profile is 26 % thinner.
Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 12-V p-channel TrenchFET® Gen III power MOSFET with the industry’s lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-75, which features a 1.6-mm by 1.6-mm footprint area. The new SiB455EDK is the latest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET in half.
Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK® SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET nearly in half.