Tag Archives: MOSFET

Microchip Unveils MCP19035 PWM Controller, MCP87xxx Power MOSFET Devices

Microchip Technology MCP19035 power-conversion controller

Microchip Technology introduced the MCP19035 power-conversion controller family and the MCP87xxx family of power MOSFET devices. The MCP19035 and MCP87xxx families are available now for sampling and volume production. The MCP19035 family is available in a 3×3 mm 10-pin DFN package. Prices start at $1.12 each in 5,000-unit quantities. The MCP87022 and the MCP87050 are availalbe in a 5×6 mm 8-pin PDFN packages and the MCP87055 is available in a 3.3×3.3 mm 8-pin PDFN package. Prices start at $0.96, $0.45, and $0.39, respectively (5,000-unit).

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Summit Microelectronics SMB220 and SMB221 Buck Regulators

Summit Microelectronics introduced their SMB220 and SMB221 integrated 10A and 20A buck regulators. The new chips feature built-in MOSFET’s, digital programmability and non-volatile configuration. The Summit step-down DC-DC buck regulators are available now in a thermally-enhanced, RoHS-compliant, lead-free 5mm X 6mm, 28-pad QFN. The SMB220 is priced $1.80 each while the SMB221 is priced at $2.50 respectively (quantities of 10,000 units). The SMB220/SMB221 are ideal for enterprise servers and storage systems, enterprise and carrier switches/routers/base stations, and consumer digital media (IP digital television and set-top box).

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SEMATECH to Report on Resistive RAM Memory and FinFET Devices at IEDM

Revealing research breakthroughs, engineers from SEMATECH’s Front End Processes (FEP) program will present technical papers at the 56th annual IEEE International Electron Devices Meeting (IEDM) from December 6-8, 2010, at the Hilton in San Francisco, CA. SEMATECH experts will report on resistive RAM (RRAM) memory technologies, advanced Fin and nanowire FETs for scaled CMOS devices, high mobility III-V channel materials on 200mm silicon wafers in an industry standard MOSFET flow, and future ultra-low power tunneling FET devices — highlighting significant breakthroughs that address the growing need for higher performance and low power devices.

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Vishay Siliconix Unveils 60-V Power SiM400 MOSFET in SOT-923 Package

Vishay Intertechnology, Inc. (NYSE: VSH) released a 60-V n-channel power MOSFET in the tiny SOT-923 package that will provide dramatic space savings over devices in larger packages such as the SC-70 and SC-89. The smallest 60-V power MOSFET ever released, the SiM400 in the SOT-923 measures 1 mm by 0.6 mm with a maximum height profile of 0.43 mm. Its footprint dimensions are 77 % smaller than the SC-89, and its height profile is 26 % thinner.

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Vishay Debuts SiB455EDK 12-V p-channel TrenchFET Gen III Power MOSFET

Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 12-V p-channel TrenchFET® Gen III power MOSFET with the industry’s lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-75, which features a 1.6-mm by 1.6-mm footprint area. The new SiB455EDK is the latest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET in half.

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Vishay Intertechnology Rolls Out SiA433EDJ 20-V P-Channel Power MOSFET

Vishay Intertechnology, Inc. (NYSE: VSH) introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK® SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET nearly in half.

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