Imec released an early version of a process development kit for 14nm logic chips. The 14nm PDK was developed as part of imec’s INSITE program, and together with all the partners involved in this collaborative affiliation program. The process development kit will be made available to imec’s partners, and will include incremental updates. In addition, imec and its partners are developing a 14nm test chip to be released in the 2nd half of 2012 using this PDK.
Imec and Renesas Electronics teamed together to develop a successive-approximation register analog to digital converter. The new ADC is an ultra-low power (1.7mWatt) high resolution (11b) fully-dynamic, two-step interleaved pipelined SAR ADC with a record power efficiency of 10fJoule per conversion step at a sampling speed as high as 250MSamples/s. The SAR ADC is ideal for wireless receivers for next-generation high-bandwidth standards such as LTE-advanced and the emerging generation of Wi-Fi (IEEE802.11ac).
Imec and Holst Centre will present at the International Solid-State Circuits Conference next week in San Francisco, California. They will present fourteen papers on low power design for wireless communication and wireless sensor networks, and organic electronics. In addition, imec and Holst Centre will also reveal other important breakthroughs in wireless communication and wireless sensor networks, and organic electronics.
Imec and Holst Centre have created a micromachined harvester for vibration energy. The harvester has a record output power of 489µW when the vibrations closely match the MEMS’ resonance vibration (1011Hz in this case). Based on measurements and simulation, the device is ideal for shock-induced energy harvesting in car tires, where it could power built-in sensors. In a tire, at 70km/h, the micromachined harvester can deliver a constant 42µW, which is enough to power a simple wireless sensor node.
Imec and Holst Centre developed a fully chip-integrated ultralow-power impulse-radio ultra-wideband (IR-UWB) solution for the 6-10GHz band, which is available worldwide. The radio features fade-resilient and interference-free operation. Imec and Holst Centre’s solution for the 6-10GHz band makes UWB communication available for battery-operated applications in the area of personal area networks and positioning sensors worldwide. Examples include short-range video streaming or around-the-body audio streaming (e.g. between a headset and a smartphone).
Imec announced it has developed a reconfigurable receiver for highly diversified digital video broadcasting standards (DVB-T, ISDB-T and ATSC). The reconfigurable receiver was developed by using algorithm-architecture co-optimization of imec’s ADRES reconfigurable processor. ADRES is short for architecture for dynamically reconfigurable embedded systems.
Imec, Plextronics and Solvay teamed together on an organic polymer-based single junction solar cell with 6.9% performance in an innovative inverted device stack. New levels of cell efficiency were achieved by combining imec’s scalable inverted device architecture and Plextronics’ polymers. The polymer was also integrated into a module resulting in excellent module level efficiencies of 5% for an aperture area of 25cm2.
Imec has successfully fabricated implant-free quantum-well (IF-QW) pFETs with an embedded silicon-germanium (SiGe) source/drain. Imec’s second generation of SiGe45% IF-QW pFETs were processed on standard 300mm STI wafers. Compared to earlier IF-QW devices, the raised SiGe and Si substrate are recessed and replaced with a thick SiGe25% epi-layer to form the source/drain electrodes.
Cadence Design Systems and imec teamed together to develop technology for testing 3D stacked ICs (3D-ICs). Their automated test solution makes it easier to test 3D-ICs with through-silicon via (TSV) functionality and helps ensure that the stacked system will work as intended. The solution includes design-for-test (DFT) and automatic test pattern generation (ATPG) technology.
Imec has developed device-quality wafers with GaN/AlGaN layers on 200mm silicon wafers. Functional GaN MISHEMTs were processed using standard CMOS tools by imec and their GaN industrial affiliation program (IIAP) partners. The used processes are compatible with the strict contamination rules in a standard CMOS processing line (without the use of gold).