Microchip Debuts SST25PF020B, SST25PF040B, SST25PF080B SPI Flash Memory
Microchip Technology introduced the SST25PF020B, SST25PF040B and SST25PF080B SPI Flash memory devices. The SST25PF020B is priced at $0.53 each, in 8-lead 150 mil SOIC, 8-contact USON (3×2 mm), or 8-contact WSON (6×5 mm) packages. The SST25PF040B starts at $0.66 each, in 8-lead 150 mil SOIC, 8-lead 200 mil SOIC, or 8-contact WSON (6×5 mm) packages. The SST25PF080B starts at $0.81 each, in 8-lead 150 mil SOIC, 8-lead 200 mil SOIC, or 8-contact WSON (6×5 mm) packages. All prices are based on 10,000 unit-quantities.
The Microchip SST25PF020B, SST25PF040B and SST25PF080B feature 2-, 4- and 8-Mbit of memory. They are manufactured with the company’s high-performance SuperFlash technology, a split-gate, NOR Flash design with thick-oxide tunneling injector for superior quality and reliability. They are ideal for smart meters, wireless products for sports/fitness/health monitoring, digital radios, low-power Wi-Fi products, GPS, and a wide array of battery-operated products. Additionally, these SPI Flash memory devices are well suited for use in medical applications, such as glucose meters, hearing aids and wireless sensors.
The memory of the SPI Flash devices is partitioned into uniform 4 Kbyte sectors, and 32 and 64 Kbyte blocks. They offer flexible erase capabilities and seamless partitioning for program and data code in the same memory block. All three devices enable designers to reduce their overall product design cycles and total system costs while improving product performance. The extended voltage range provides designers with a wider set of options on the power-supply voltage for their chipsets and board designs, and reduces overall power consumption.
The SST25PF020B, SST25PF040B and SST25PF080B SPI Flash devices offer flexible erase and program performance, including erasing sectors and blocks as fast as 18 ms, erasing the entire Flash memory chip in 35 ms, and a word-programming time of 7 µs using Auto Address Increment (AAI). The devices also offer superior reliability of 100,000 endurance cycles, typical, and greater than 100 years of data retention. The active read current of these devices is only 10 mA, typical, at 80 MHz, and standby current is only 10 µA, typical.
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