Microchip Unveils SST12LF03 RF Front-End Module for WLAN IEEE 802.11b/g/n, Bluetooth

Microchip Technology introduced their SST12LF03 RF front-end module for WLAN IEEE 802.11b/g/n and Bluetooth systems. The SST12LF03 includes a transmitter power amplifier, a receiver low-noise amplifier (LNA) and a low-loss antenna switch — in one integrated, compact package. The high level of integration simplifies board design and extends the range of wireless systems. It is ideal for WLAN/BT embedded applications where small size and high performance are required. The new Microchip device is available in a 20-pin, 3mm x 3mm UQFN package for $0.61 each (10,000-unit quantities). Samples and volume-production quantities are available now.

Microchip Technology SST12LF03 integrated RF front-end module for WLAN IEEE 802.11b/g/n and Bluetooth systems

Microchip’s SST12LF03 is a fully integrated Front-End Module (FEM) for WLAN 802.11b/g/n and Bluetooth systems. The SST12LF03 RF module includes a PA, a LNA, and an antenna switch. The device is based on GaAs PHEMT/HBT technology, and operates within the frequency range of 2.4- 2.5 GHz with a very low DC-current consumption.

The transmitter chain has excellent linearity — typically 3% added EVM up to 19 dBm output power for 54 Mbps 802.11g operation. It meets 802.11b spectrum mask at 22 dBm. The receiver chain provides a low noise amplifier and has options for simultaneous WLAN and Bluetooth operation.The SST12LF03 is offered in a 20-contact UQFN package.

Microchip SST12LF03 Features

  • Input/output ports are matched to 50Ω internally and DC decoupled
  • 20-contact UQFN, 3mm x 3mm x 0.55mm packages available
  • All non-Pb (lead-free) devices are RoHS compliant
  • Typically 28 dB gain across 2.4-2.5 GHz over temperature -20°C to +85°C for transmitter
  • Meets 802.11g OFDM ACPR requirement up to 21 dBm
  • 3% added EVM up to 19 dBm for 54 Mbps 802.11g signal
  • Meets 802.11b ACPR requirement up to 22 dBm
  • High power-added efficiency/Low operating current for 802.11b/g/n applications
  • Low shut-down current (about 2 µA)
  • About 1 dB power variation between -20°C to +85°C
  • About 2 dB gain variation between -20°C to +85°C
  • Temperature and load insensitive on-chip power detector with >20 dB dynamic range, temperature-stable, on-chip power detection
  • LNA ON: typically 12 dB gain, 3.1 dB noise figure, >5dB P1dB
  • Typically 2.5 dB loss for Bluetooth path
  • Simultaneous BT/WLAN Rx mode, 8 dB gain, 3.1 dB noise figure

More info: Microchip Technology Inc.