Content Addressable Memory Enables Electronics to Start Instantly

NEC and Tohoku University have developed the first content addressable memory (CAM) that both maintains the same high operation speed and non-volatile operation as existing circuits when processing and storing data on a circuit while power is off. The content addressable memory is a part of spintronics logic integrated circuit technologies that utilize the negative properties of electrons together with the spin magnetic moment. NEC’s new CAM utilizes the vertical magnetization of vertical domain wall elements in reaction to magnetic substances in order to enable data that is processing within the CAM to be stored on a circuit without using power.

NEC’s and Tohoku University’s Content Addressable Memory Highlights

  • Enables the development of electronics that start instantly and consume zero electricity while in standby mode
  • High-speed data retrieval
  • Nonvolatile and high speed is maintained
  • Utilizes the negative properties of electrons together with the spin magnetic moment
  • Two spintronics devices, spinning in opposite directions to one another, are connected within the same cell
  • Utilizes the vertical magnetization of vertical domain wall elements in reaction to magnetic substances
  • Enables data that is processing within the CAM to be stored on a circuit without using power
  • Writing is done once by connecting two devices in a series using three pin particles that separate the current path into writing and reading
  • Process enables cells to become more compact because the number of writing switches per element is reduced by one
  • Same level of high-speed data retrieval as current CMOS based CAM that feature 5ns and low power consumption of 9.4mW
  • 50% CAM area reduction compared to existing technologies
  • Reduces the number of transistors from eight to three in every two cells by sharing transistors

More info: NEC Corporation | Tohoku University