Alliance Memory 64-Mb, 128-Mb, and 256-Mb CMOS Synchronous DRAMs

Alliance Memory rolled out the AS4C4M16S (64 Mb), AS4C8M16S (128 Mb), and AS4C16M16S (256 Mb) high-speed CMOS synchronous DRAMs (SDR). Samples of the synchronous DRAMs are available now. Production quantities will be available next week (lead times of six weeks). The 143 Mhz SDR devices are priced from $0.90 to $1.80 in 1,000-piece quantities. The Alliance Memory SDRs are ideal for industrial, communications, medical, and consumer products (like PC applications).

Alliance Memory Synchronous DRAM (SDR) Features

  • 64 Mb (AS4C4M16S), 128 Mb (AS4C8M16S), and 256 Mb (AS4C16M16S) densities
  • Internally configured as four banks of 1M, 2M, or 4M word x 16 bits
  • Clock cycle (ns): 6/7 (AS4C4M16S), 6/7 (AS4C8M16S), and 5/6/7 (AS4C16M16S)
  • Maximum access time from clock (ns): 5.4/5.4 (AS4C4M16S), 5/5.4 (AS4C8M16S), 4.5/5.4/5.4 (AS4C16M16S)
  • Clock rate (MHz): 166/143 (AS4C4M16S), 166/143 (AS4C8M16S), 200/166/143 (AS4C16M16S)
  • Programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option
  • Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
  • Easy-to-use refresh functions: auto- or self-refresh
  • Programmable mode register enables the system to choose the most suitable modes to maximize performance
  • Synchronous interface
  • Operate from a single +3.3 V (±0.3V) power supply
  • Lead (Pb) and halogen free
  • Packaged in a 54-pin, 400-mil plastic TSOP II

More info: Alliance Memory Synchronous DRAM (SDR)