Intel’s and Micro’s 20nm Multi-level Cell NAND Flash Memory

IM Flash Technologies (IMFT) will manufacture a new 20nm 8-gigabyte multi-level cell (MLC) NAND flash device. IMFT is a NAND flash joint venture of Intel and Micron Technology. The 20-nanometer 8GB device is sampling now. It will enter mass production in the second half of this year. Also later this year, Intel and Micron will start sampling a 16GB device. As a result, up to 128GBs of capacity can be packed into a single solid-state storage solution that will be smaller than a U.S. postage stamp.

Comparison of two 32Gb 34nm die versus one 64Gb on 25nm and 20nm process from IMFT
Two 32Gb IMFT 34nm die versus 64Gb, or 8GB, die on 25nm and 20nm processes

20nm 8GB MLC NAND Flash Highlights

  • Highest capacity in smallest form factor for tablets, smartphones, SSDs
  • 20nm 8GB device measures only 118mm2
  • Enables a 30% to 40% reduction in board space (compared to 25nm 8GB NAND device)
  • Results in higher system level efficiency
  • Enables larger battery, bigger screen or addition chip for tablets and smartphones
  • 20nm technology node increases fab output
  • Maintains similar performance and endurance as the previous generation 25nm NAND technology
  • Manufactured by IM Flash Technologies (IMFT)
  • 20nm, 8GB device is sampling now; mass production in the second half of 2011
  • 16GB device samples expected later this year
  • Up to 128GB on a single postage stamp size solid-state storage device

More info: Intel | Micron Technology