Micron Technology, Inc. (NYSE:MU) introduced a serial NAND flash memory technology, providing embedded applications with the flexibility to easily upgrade their storage capacity. With chip density starting at 1 gigabit (Gb), Micron’s serial NAND flash allows customers to easily and cost-effectively extend their storage capacity beyond what is currently available with serial NOR flash, and it provides a significant cost-per-bit advantage.
“Micron’s serial NAND offers the lowest cost-per-bit serial interface flash on the market,” said Kevin Kilbuck, director of NAND market development for Micron. “There are several embedded applications today that require 128 megabytes or more of storage, and we expect capacity to continue to grow, providing the need for a NAND-based storage alternative to NOR flash.”
As embedded systems evolve, they are requiring more robust and higher-density memory solutions. Gone are the days when WiMAX devices, set-top boxes, printers and other industrial and automotive applications were designed only to decode information. They now contain more sophisticated operating systems for managing multimedia, photos and other data-intensive content, which are driving the need for these devices to contain greater storage capacity.
Recognizing these application needs, Micron has leveraged its trusted NAND technology, providing customers with a storage solution that offers increased density, improved write performance and greater scalability — allowing them to expand their application storage capacity without having to perform a complete system redesign. Additionally, Micron’s serial NAND utilizes the same package type as parallel NAND, effectively acting as a transitional gateway for manufacturers to move from a serial into a parallel NAND interface, if and when needed.
Micron Serial NAND Technical Advantages
- Compatibility: Compatible with the industry standard Serial Peripheral Interface (SPI) command set.
- Maximize capability: Provides the density required to maximize system capability and lower bill of material (BOM) cost. User generated content is stored directly to the device, eliminating the need for a separate NAND chip.
- Faster: Running at 2.64 MB/s, Micron’s serial NAND flash offers faster write performance than NOR flash, which falls below .5 MB/s.
- Simplified design: Offers improved BOM by removing the external card slot and resolves complications with raw NAND through on-chip error correction code (ECC).
- Greater security: Provides read-only area and protected block lock to prevent tampering of the content stored in the device.
Micron’s 1Gb serial NAND technology is sampling now with volume production expected in the first quarter of 2009. Micron also plans to introduce higher-density serial NAND flash products reaching 4Gb in early 2009.
Micron Technology, Inc. is one of the world’s leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, NAND flash memory, CMOS image sensors, other semiconductor components, and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron’s common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol.
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