SemiSouth Laboratories Inc., a silicon carbide (SiC) based semiconductor company, will discuss the characteristics and specifications of their normally-off SiC JFET for 800V and 1200V power switching applications. SiC-based power semiconductors provide several advantages over their silicon-based counterparts. As a wide bandgap, unipolar device, the normally-off SiC JFET is an ideal candidate for use in high power switching applications.
The paper entitled “Normally-off SiC VJFET for 800V and 1200V Power Switching Applications” reports on the design aspects and characteristics of the SemiSouth, normally-off SiC JFET. The characteristics are examined theoretically and supported with measured results from characterizing packaged devices for DC and switching performance and testing them in power switching applications at both 800V and 1200V. The results validate the uniqueness of SemiSouth’s VJFET as a normally-off, silicon carbide transistor that has the lowest specific on-resistance for available transistors in this voltage range.
Dr. Igor Sankin, Principal Device Engineer, will present this paper on Wednesday, May 21 in session WB1-2 from 8:55am – 9:20am.
ISPSD ’08 is being held at the Wyndham Orlando Resort in Orlando, Florida, May 18-22, 2008.
About SemiSouth Laboratories, Inc.
Founded in 2000, with headquarters in Austin, Texas and manufacturing in Starkville, Mississippi, SemiSouth is a privately held silicon carbide (SiC) based semiconductor company. As an industry leader in the development and manufacture of SiC electrical components and materials for high-power, high-efficiency, harsh-environment power management applications, SemiSouth provides discrete power devices, and SiC epiwafers. SiC-based semiconductor devices offer significant advantages over competing products based on silicon and other semiconductor materials for power management applications.
SemiSouth and the SemiSouth logo are trademarks of SemiSouth Laboratories, Inc.