Micron Technology, Inc. (NYSE:MU) announced that it is the first company to sample an 8 gigabit (Gb) single-level cell (SLC) high speed NAND product. High speed NAND enables data to be transferred in a fraction of the time compared to conventional NAND.
“As more and more of today’s popular consumer electronic and computing devices continue to move to silicon for storage, it is essential that we improve how data is accessed and transferred in NAND,” said Bill Lauer, senior director of marketing for Micron’s memory group. “With the new capabilities designed into high speed NAND, the performance benefits will be visible to the consumer, allowing them to experience a faster way of transferring digital content between devices such as computers, digital cameras, MP3 players and cell phones.”
SLC high speed NAND can read data at speeds up to 200 megabytes per second (MB/s) and can write data at speeds up to 100 MB/s, achieved by leveraging the new ONFI 2.0 specification and a four plane architecture with higher clock speeds. In comparison, conventional SLC NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.
Designed on the 50-nanometer process node, Micron’s 8 Gb SLC high speed NAND component is sampling now to major OEMs and controller manufacturers with mass production expected to commence in the second half of 2008. The company also expects to unveil future ONFI 2.0-derived NAND products in the next year.
Micron Technology, Inc., is one of the world’s leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, NAND flash memory, CMOS image sensors, other semiconductor components, and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron’s common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol.
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