Innovative Silicon Inc.(ISi), the developer of Z-RAM® high-density memory intellectual property (IP), announced it is a founding member of the newly formed SOI Industry Consortium, that is poised to accelerate the broad adoption of silicon-on-insulator (SOI) semiconductor technology.
“ISi is proud to be an inaugural member of the SOI Industry Consortium as we are committed to seeing broader availability and use of SOI technology throughout the industry,” said Jeff Lewis, Innovative Silicon Inc.’s vice president of marketing and product operations. “SOI-based devices offer users many advantages. For example, our Z-RAM memory IP on SOI wafers delivers superior power, performance, density and cost advantages over today’s DRAM and SRAM memory devices created on bulk CMOS. We are enthusiastic that the other founding members of the consortium are also committed to the mainstream adoption of SOI technology.”
About the SOI Industry Consortium
The SOI Industry Consortium is chartered with accelerating silicon-on-insulator (SOI) innovation into broad markets by promoting the benefits of SOI technology and reducing the barriers to adoption. Representing leaders spanning the entire electronics industry infrastructure, SOI Industry Consortium charter members include: AMD, ARM, Cadence Design Systems, CEA-Léti, Chartered Semiconductor Manufacturing, Freescale Semiconductor, IBM, Innovative Silicon, KLA-Tencor, Lam Research, NXP, Samsung, Semico, Soitec, SEH Europe, STMicroelectronics, Synopsys, TSMC and UMC. Membership is open to all companies and institutions throughout the electronics industry.
About Innovative Silicon
Innovative Silicon Inc. (ISi) delivers ultra-high density memory IP for embedded SoC, MPU and portable consumer applications requiring low power, high density and high speed. Endorsed by IEEE Spectrum Magazine in January 2007 as the winning semiconductor technology, and again in April 2007 by winning its ACE award for Emerging Technology, ISi’s Z-RAM® memory offers up to twice the density of embedded DRAM and is up to five times denser than embedded SRAM. Z-RAM memory is currently being licensed by Hynix Semiconductor for use in its DRAM chips. The company closed its first round of VC funding in 2003, completed its first 90nm megabit Z-RAM memory designs in 2004, its first 65nm designs in 2005 and its first 45nm designs in 2006. With more than 20 patents already granted, Z-RAM®’s unique single-transistor architecture is the world’s lowest cost semiconductor memory solution. The company is incorporated in the USA with R&D in Lausanne, Switzerland.
Z-RAM is a registered trademark of Innovative Silicon Inc.