MoSys, Inc. (Nasdaq: MOSY), the leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP) solutions and BiTMICRO Networks, the leading provider of high-performance non-volatile solid-state disk and semiconductor solutions, announced that BiTMICRO has become the latest licensee of MoSys’ 1T-SRAM(R) embedded memory macro technology. BiTMICRO will leverage MoSys’ technology to add new performance, latency and area advantages to its range of E-Disk(R) solid-state storage solutions.
At a speed of 350 Mhz in a standard 90-nm CMOS logic process, the MoSys-enabled BiTMICRO memory macro reaches a performance level that is unmatched by other embedded memory technologies.
“BiTMICRO’s solid-state disk drive and flash disk-drive solutions are ideal for harsh, demanding, and mission-critical applications in the industrial, embedded, computer, communication, medical, military, and aerospace industries,” said Rey Bruce, president and CEO of BiTMICRO Networks. “MoSys’ 1T-SRAM technology was the only available solution that could meet the high performance, low latency and demanding reliability requirements of our system design.”
“MoSys and BiTMICRO are collaborating closely to provide this performance-optimized design on a standard 90-nm CMOS process,” said Chet Silvestri, president and CEO of MoSys. “The broad range of applications for the E-Disk solution further extends the reach of MoSys’ 1T-SRAM technology into areas with demanding portability, durability, and speed requirements.”
About BiTMICRO Networks
BiTMICRO(R) Networks is the leading provider of high performance solid state disk and non-volatile semiconductor storage solutions. The Company’s flagship product, the E-Disk(R) SSD, is offered with SATA, SCSI Narrow and Wide, IDE/ATA and Fibre Channel interfaces in 2.5-inch and 3.5-inch hard disk drive footprints, and 19-inch rack mount configurations scalable up to several terabytes of pure solid state storage.
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys’ patented 1T-SRAM(R) and 1T-FLASH(R) technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 100 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085.
E-Disk(R), BiTMICRO(R), EDSA(TM) and LUNETA(TM) are registered trademarks and trademarks of BiTMICRO Networks, Inc. 1T-SRAM and 1T-FLASH are registered trademarks of MoSys, Inc.