Toshiba Corp. (Toshiba) announced with Toshiba America Electronic Components, Inc. (TAEC), its subsidiary in the Americas, that the company has commercialized a new embedded NAND Flash memory series, which complies with the eMMC(TM) standard and achieves the industry’s largest capacity(1). The new 16 gigabyte(2) (GB) devices are designed for application in mobile consumer products, such as mobile phones and video cameras. Samples will be available in the second quarter of this year and mass production will start in the fourth quarter. Ahead of that, Toshiba will start shipping 8GB samples this month, and will start mass production in the third quarter.
The new 16GB chip combines eight 2GB NAND chips fabricated with Toshiba’s cutting-edge 56nm process technology, along with a controller chip, in a standard small size package. The new embedded memory offers advantages that realize a versatile, easily applied solution: the largest capacity yet achieved in this product category will bring new capabilities to mobile consumer products; integration of a dedicated controller reduces product development burdens on product manufacturers; and full compliance with the MultiMediaCard Association (MMCA) Ver. 4.2 high speed memory standard for memory cards, which supports standard interfacing, a maximum data transfer rate of 52MB/sec.(3) and simplified embedding in products.
Toshiba will launch a series of embedded NAND Flash memories based on the new technology, ranging from 1GB to 16GB in capacity. This wide line-up of eMMC(TM) compliant memories will enable application of these devices in a wide range of products.
There is growing demand for memories with a controller function that minimize development requirements and ease integration into system designs. Toshiba has responded with products such as the LBA-NAND(TM) memory, which incorporates basic control functions for NAND applications, and GB-NAND(TM), a large capacity chip with an SD interface. Adding the eMMC(TM) compliant line-up to its portfolio will assure Toshiba’s continued leadership in this expanding market.
NAND Flash Background
Toshiba was a principal innovator of NAND- and NOR-type Flash memory technology in the 1980′s and maintains leadership in Flash technology today, with a complete line of removable and embedded NAND solutions to meet various application requirements. NAND Flash has become one of the leading technologies for solid-state storage applications because of its high-speed programming capability, high-speed erasing, and low cost. The sequential nature (serial access) of NAND-based Flash memory provides notable advantages for these block-oriented data storage applications. Toshiba’s NAND Flash memory products are optimized for general solid-state storage, image file storage and audio for applications such as solid-state disk drives, digital cameras, audio appliances, set-top boxes and industrial storage.
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan’s largest semiconductor manufacturer and the world’s fourth largest semiconductor manufacturer. In more than 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.
LBA-NAND and GB-NAND are trademarks of TOSHIBA Corporation. eMMC is a trademark of the MultiMediaCard Association.
MEMY 07 470
(1) As of the date of this announcement.
(2) When used herein in relation to memory density, gigabyte and/or GB means 1,024×1,024×1,024 = 1,073,741,824 bytes. Usable capacity may be less. For details, please refer to specifications.
(3) For purposes of measuring data transfer rate in this context, 1 MB = 1,000,000 bytes.
(4) When used herein in relation to memory density, megabyte and/or MB means 1,024×1,024 = 1,048,576 bytes. Usable capacity may be less. For details, please refer to applicable product specifications.
(5) For purposes of measuring data transfer rate in this context, 1 kilobit = 1,000 bits.
(6) Read and write speed may vary depending on the read and write conditions, such as devices you use and file sizes you read and/or write. (For purposes of measuring read or write speed in this context, 1 MB = 1,000,000 bytes).