MoSys, Inc. (Nasdaq: MOSY), the leading provider of high-density system-on- chip (SoC) embedded memory intellectual property (IP) solutions, and Progate Group Corporation, Taiwan’s first ASIC design turnkey service provider, announced that their latest joint customer will begin production of a new generation CMOS chip that will enhance the real-time conference calling capabilities of mobile phones.
Together, the companies have satisfied the customer’s need to incorporate a large amount of embedded memory on a competitively priced consumer-oriented SoC. Progate was selected to lay out and produce the SoC based on customer specifications. To meet the performance, leakage and area requirements, Progate chose a high-density 1T-SRAM solution from MoSys.
“Progate was an obvious choice to develop this SoC due to our track record and our certification under the TSMC Design Center Alliance program,” said Jack Kao, director of research and development at Progate. “MoSys’ 1-T SRAM offers the ideal embedded memory solution in the integration of the SoC. Its compact size and high performance enabled us to reduce the die size while maintaining a high yield.”
“MoSys and Progate worked very efficiently together to ensure that the product was delivered to the customer on time and within budget,” said Chet Silvestri, president and CEO of MoSys. “By working with experienced design service providers like Progate, we can deliver the advantages of our 1T-SRAM technology to a large number of customers.”
About Progate Group Corporation
Progate Group Corporation was founded in 1991. As the first turnkey service provider of ASIC designs in Taiwan, PGC always exerts its endeavor to provide the focused and quality services to achieve Time-to-Volume. PGC has taped-out successfully more than 800 projects and shipped millions of chips worldwide. In this era of SoC, PGC provides a complete and stable chain of services, including the wafer fabrication, die package and IP integration. As part of this chain of services, PGC has the business relationship with TSMC for more than ten years as a certified member of its Design Center Alliance Program.
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys’ patented 1T-SRAM(R) and 1T-FLASH(R) technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 100 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085.
1T-SRAM and 1T-FLASH are registered trademarks of MoSys, Inc.