MoSys, Inc. (Nasdaq: MOSY), the leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP), announced the availability of an application-specific implementation of its industry-leading 1T-SRAM(R) memory IP for the cellular phone market. The MoSys 1T-SRAM Dual-Port Display macros have been designed specifically for mobile handset displays. Initial customer adoption is already underway, marking MoSys’ entry into a new high-volume consumer market.
Manufacturers of mobile handsets are under increasing pressure to incorporate larger buffer memory into the display to accommodate increases in display size and pixel densities. Such increases are driven by added functionality, like video playback, gaming, and high-resolution cameras on mobile phones. The MoSys 1T-SRAM Dual-Port Display macro is used as the display buffer memory mounted on the display (chip-on-glass) or on the connecting cable (chip-on-film or tape carrier package). By keeping the display buffer memory on the display itself, mobile vendors can reduce electromagnetic interference (EMI) challenges, while cutting overall display power consumption. In these configurations, the buffer memory must conform to unusual area and form factor requirements of the display, which is easily accomplished using the MoSys 1T-SRAM technology.
Compatible with high-volume processes at major foundries and integrated device manufacturers, the MoSys 1T-SRAM Dual-Port Display macro uses standard foundry process technologies and offers a reduction in overall silicon area of up to 70 percent when compared to conventional embedded memory solutions.
Said Chet Silvestri, president and CEO of MoSys, “We continue to find ways to enable new and exciting consumer applications based on the core strength of the MoSys 1T-SRAM technology. We are seeing strong customer interest in our new MoSys Dual-Port Display macro, which is the first application-optimized memory built on our technology platform. It is already being designed into mobile handset devices.”
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys’ patented 1T-SRAM & 1T-FLASH technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 100 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085.
1T-SRAM is a registered trademark of MoSys, Inc.