Innovative Silicon (ISi), the developer of Z-RAM high-density memory intellectual property (IP), announced that it has been selected to exhibit in the Disruptive Zone in booth 3068B at the Embedded Systems Conference (ESC) Silicon Valley, April 3-5, 2007, at the San Jose McEnery Convention Center. The new Disruption Zone showcases only 16 companies whose products are slated to change the future of the embedded industry with groundbreaking improvements in embedded design or embedded systems performance.
To be considered for the Disruption Zone, companies had to prove that they meet at least one of the four requirements:
- Offer a technology or service that potentially delivers a 10x improvement in an aspect of embedded design or embedded systems performance
- The product may potentially change the competitive landscape and displace incumbents
- Technology or service that can be delivered to the field at or within three months of ESC Silicon Valley (April 2007)
- Company is introducing a new business model that will change industry dynamics
ISi met all four requirements as its Z-RAM technology provides up to twice the density of embedded DRAM and up to five times denser than embedded SRAM, making it the world’s lowest-cost semiconductor memory solution. There are no other SRAM or DRAM product offerings that feature only one transistor and zero capacitors. Today, ISi can provide both technology and instance licenses for its patented Z-RAM technology. Last, Z-RAM, with its significant cost, performance, density improvement, is a key reason for utilizing Silicon on Insulator (SOI) for mainstream applications.
Beyond exhibiting at ESC, the company is being recognized by IEEE Spectrum Magazine as having the winning semiconductor technology for 2007 in an awards luncheon on April 3 at the Fairmont in San Jose. That evening, Dr. Serguei Okhonin, ISi’s chief scientist and co-founder, will be recognized by EE Times’ as an ACE Award Innovator of the Year Finalist. One winner will be named that night.
About Innovative Silicon
Innovative Silicon Inc. (ISi) delivers ultra-high density memory IP for embedded SoC, MPU and portable consumer applications requiring low power, high density and high speed. Endorsed by IEEE Spectrum Magazine in January 2007 as the ‘winning’ semiconductor technology, ISi’s Z-RAM(R) memory offers up to twice the density of embedded DRAM and is up to five times denser than embedded SRAM. The company closed its first round of VC funding in 2003, completed its first 90nm megabit Z-RAM memory designs in 2004, its first 65nm designs in 2005 and its first 45nm designs in 2006. With more than 20 patents already granted, Z-RAM(R)’s unique single-transistor architecture is the world’s lowest cost semiconductor memory solution. The company is incorporated in the USA with R&D in Lausanne, Switzerland.
Z-RAM is a registered trademark of Innovative Silicon Inc.