Renesas Technology America, Inc. announced the R2J20602NP, a highly optimized power solution that achieves the industry’s highest efficiency level. The device integrates a driver IC and high- and low-side(1) power MOSFETs in a 56-pin QFN package that conforms to the integrated Driver-MOSFET (DrMOS) package standard. The driver-MOSFET product is ideal for voltage regulators, DC-DC switching power supplies, and point-of-load (POL) converters essential for providing the stable low-voltage DC power needed in PCs, servers, and many other types of electronic equipment.
The R2J20602NP is Renesas’ second-generation driver-MOSFET product that operates at up to a 2MHz switching frequency and has a maximum output current of 40A. When operating at 1MHz with Vin = 12V, Vout = 1.3V, it achieves a maximum efficiency of approximately 89 percent, the industry’s highest level. With an output current of 25A, power loss is only 4.4W. This is the industry’s lowest level and is at least 20 percent lower than the first-generation R2J20601NP device, with which it is package and pin compatible for easy design upgrades.
“Manufacturers of blade servers, hard disk devices, PCs, test equipment, and communication equipment are being challenged to find ways to handle the trend to lower voltages, larger currents, and higher operating frequencies for electronic components such as CPUs, FPGAs, and memories,” said Tetsuo Sato, director of business development, solutions business unit at Renesas Technology America. “As a result, they find it essential to design or purchase power supply circuits that offer faster response, output lower voltages and more current, yet are also smaller and more efficient. Our new R2J20602NP power device addresses these issues directly. This compact, second-generation DrMOS compliant product delivers the best power efficiency in the industry.”
The R2J20602NP’s package is a RoHS-compliant, high heat-radiation type with a small (8mm x 8mm) mounting-area. Compliant with the DrMOS package standard proposed by Intel Corporation, it uses a wireless copper-plate construction technique for internal connections, greatly reducing resistance and parasitic inductance(2) within the package. Pins for large-current paths occupy most of the rear surface of the package and facilitate heat dissipation.
The R2J20602NP will be available in December for $6.30.
About Renesas Technology Corp.
Renesas Technology Corp. is one of the world’s leading semiconductor system solutions providers for mobile, automotive and PC/AV (Audio Visual) markets and the world’s No.1 supplier of microcontrollers. It is also a leading provider of LCD Driver ICs, Smart Card microcontrollers, RF-ICs, High Power Amplifiers, Mixed Signal ICs, System-on-Chip (SoC), System-in-Package (SiP) and more. Established in 2003 as a joint venture between Hitachi, Ltd. (TSE:6501) (NYSE:HIT) and Mitsubishi Electric Corporation (TSE:6503), Renesas Technology achieved consolidated revenue of 906 billion JPY in FY2005 (end of March 2006). Renesas Technology is based in Tokyo, Japan and has a global network of manufacturing, design and sales operations in around 20 countries with about 26,200 employees worldwide.
Specifications: Renesas Technology R2J20602NP Integrated Driver-MOSFET Power Switching Device:
Product name: R2J20602NP
Input voltage: 7.4V to 16V
Output voltage: 0.8V to 5.0V
Maximum rated current: 40A
Maximum operating frequency: 2MHz
Power loss: Approx. 4.4W @ Iout = 25A, fsw = 1MHz, Vin = 12V, Vout = 1.3V
Configuration: High-side MOSFET, low-side MOSFET, and driver IC
Package: 56-pin QFN (8mm x 8mm x 0.95mm, 0.5mm pin pitch)
(1) High-side and low-side MOSFETs: Power transistors used as non-insulating type electronic switches. They enable voltage conversion to be performed by means of alternate on/off switching, while maintaining synchronization between the high side and low side. The high-side switch is used as a DC-DC converter control switch; the low-side switch is used as a synchronous rectification switch.
(2) Parasitic inductance: Inductance that is naturally present in wiring, having a value approximately proportional to the length of the wiring. The larger this value, the harder it is for the gate current that switches a power MOSFET on or off to flow, and the greater the extent to which high-speed switching operation is impeded. Parasitic inductance is a cause of major switching loss in high-frequency switching applications, so the lower, the better.