Hynix Semiconductor, Inc. announced it has developed the world’s fastest and smallest 512Megabit mobile DRAM. This product meets the JEDEC standards and operates at the world’s fastest speed of 200MHz.
By using 32 I/Os, Hynix’s 512Mb mobile DDR SDRAM processes 1.6Gbytes (400Mbps x 32) of data in 1 second, which is by close to 1.5 times faster than speed of the company’s existing mobile DRAM products. Hynix says, “as the third generation of mobile phones has emerged, our 512Mb mobile DRAM is expected to offer higher capacity and faster speed solutions, which are required for advanced handsets such as DMB players and display phones.”
In addition to improved speed, Hynix’s 512Mb mobile DRAM features the industry’s smallest size, 8mm x 10mm. Thus the memory is projected to enhance the Company’s competitiveness in the mobile sector, which has showed a trend of miniaturization. Moreover, Hynix is expected to combine 512Mb mobile DRAM and NAND Flash in a multi-chip package (MCP), which will contribute to production of slimmer mobile phones.
Hynix says, “We are almost in the final stage to receive the world’s first validation by major mobile chipset companies and we have already received positive response from them.” Hynix is looking forward to achieving the validation and leading the JEDEC standards.
By launching the world’s fastest 512Mb mobile DRAM, Hynix has proved its technology leadership again. The Company will continue enhancing its development and marketing of mobile DRAM products in order to meet such different demands for higher speed, larger capacity and lower power memory.
About Hynix Semiconductor Inc.
Hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) and Flash memory chips to a wide range of established international customers. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange.