IMEC, Riber Team on Germanium and III-V devices for Sub-22nm Node

Riber, a world-leading supplier of MBE products and services to the compound semiconductor community, joins IMEC’s Industrial Affiliation Program (IIAP) on Germanium (Ge) and III-V devices for CMOS beyond the 22nm node.

The availability of a unique molecular beam epitaxy (MBE) cluster at IMEC, the Belgian nanoelectronics and nanotechnology research institute, will enable IMEC and its partners to create fundamental know-how on Ge and III-V processing and to develop the core technology ingredients.

The program aims to demonstrate that the introduction of Ge and III-V materials allows for CMOS scaling beyond 22nm. Moreover, this collaboration will form the base for a possible extension of the IIAP on Ge and III-V devices beyond mere CMOS into the area of photonic applications.

Research will be performed on Riber’s ultra-high vacuum molecular beam epitaxy cluster system for 200mm. It includes a III-V compound semiconductor growth chamber and a metal/oxide deposition chamber which will be installed in IMEC’s clean room.

The unique cluster will allow both deposition of compound semiconductor layers on GeOI or other Ge substrates and deposition of high-k dielectrics and metal gates on Ge and on III-V materials. This is considered as a potential enabling technology to make aggressively scaled devices in CMOS beyond 22nm.

The semiconductor industry has cited Ge as a potential replacement for planar silicon, since silicon is unlikely to accommodate the rigorous scaling requirements of sub-22nm geometries. The attractive properties of Ge, such as higher mobility resulting in lower intrinsic gate delay make it an excellent candidate for high-performance CMOS devices, allowing companies to leverage their existing silicon manufacturing infrastructure.

Last year, IMEC has already successfully demonstrated the feasibility of sub-micron pMOS devices on GeOI substrates. To solve the problems that occur with processing Ge nMOS transistors, III-V nMOS devices on the same Ge substrates are targeted. The process will be based on silicon wafers enabling manufacturing in a standard silicon process line using advanced CMOS compatible equipment.

One of the most demanding challenges is to improve the gate stack for MOS devices on Ge as well as on III-V compounds. The Riber MBE cluster will play a crucial role in this development.

The Ge and III-V devices program is part of IMEC’s sub-45nm CMOS research platform which is being executed with IMEC’s core partners Infineon, Intel, Matsushita/Panasonic, Philips, Samsung, ST Microelectronics, Texas Instruments and TSMC all world leading IDM and/or foundry companies.

About IMEC
IMEC is a world-leading independent research center in nanoelectronics and nanotechnology. Its research focuses on the next generations of chips and systems, and on the enabling technologies for ambient intelligence.

IMEC’s research bridges the gap between fundamental research at universities and technology development in industry. Its unique balance of processing and system know-how, intellectual property portfolio, state-of-the-art infrastructure and its strong network of companies, universities and research institutes worldwide position IMEC as a key partner for shaping technologies for future systems.

As an expansion of its wireless autonomous microsystems research, IMEC has created a legal entity in the Netherlands. Stichting IMEC Nederland runs activities at the Holst Centre, an independent R&D institute that develops generic technologies and technology platforms for autonomous wireless transducer solutions and systems-in-foil.

IMEC is headquartered in Leuven, Belgium, and has representatives in the US, China and Japan. Its staff of more than 1450 people includes more than 500 industrial residents and guest researchers. In 2005, its revenue was EUR 197 million.

About Riber
Riber is the leading manufacturer of MBE processing equipment and related services. The company offers the largest range of innovative MBE and nanometer deposition tools, from basic research equipment for each compound semiconductor material system to volume production equipment for consumer market. It also provides a global service network to support about 500 tools that have been installed worldwide. Solutions for epitaxial work or nanometer thin-film process development are offered to customers by Riber Process Technology Center (PTC), equipped with MBE and characterization tools. In some PTC, device processing is also available.

Riber develops and manufactures Molecular Beam Epitaxy (MBE) machines, which enable the manufacture of compound semi-conductor materials that are used in numerous consumer applications, such as wireless telecommunications, fiber optic networks and consumer products.

Shares of the Group’s parent company. Riber SA, are listed on the New Market of the Euronext Paris Stock Exchange and are a component of the ITAC Index. ISIN Code: FR0000075954, Reuters Code: RIBE.LN , Bloomberg Code: RIB NM Equity.

RIBER has been awarded the ANVAR innovation certification, enabling it to qualify for FCPIs (French mutual funds).